MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRP20030CTL/D
POWERTAP™ II SWITCHMODE™ Power Rectifier
...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBRP20030CTL/D
POWERTAP™ II SWITCHMODE™ Power Rectifier
The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: Dual Diode Construction — May Be Paralleled for Higher Current Output Guardring for Stress Protection Low Forward
Voltage Drop 150°C Operating Junction Temperature Recyclable Epoxy Guaranteed Reverse Avalanche Energy Capability Improved Mechanical Ratings
1 Mechanical Characteristics Case: Epoxy, Molded with metal heatsink base 2 Weight: 80 grams (approximately) Finish: All External Surfaces Corrosion Resistant Top Terminal Torque: 25 – 40 lb–in max Base Plate Torques: See procedure given in the Package Outline Section Shipped 25 units per foam Marking: B20030L 3
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MBRP20030CTL
Motorola Preferred Device
LOW VF SCHOTTKY BARRIER RECTIFIER 200 AMPERES 30 VOLTS
2 1
3 CASE 357C–03 POWERTAP II
MAXIMUM RATINGS
Rating Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage Average Rectified Forward Current (At Rated VR) TC = + 125°C Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz) TC = + 100°C Non–repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2 µs, 1 kHz) Storage Temperature Operating Junction Temperature
Voltage Rate of Change (Rat...