MBRH12040

MBRH12020 thru MBRH12040R Silicon Power Schottky Diode Features High Surge Capability Types up to 100 V VRRM D-67 Package VRRM = 20 V - 100 V IF = 120 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 136 °C TC = 25 °C, tp = 8.3 ms Conditions MBRH12020 (R) MBRH12030 (R) MBRH12035 (R) MBRH12040 (R) 20 14 20 120 2000 -40 to 175 -40 to 175 30 21 30 120 2000 -40 to 175 -40 to 175 35 25 35 120 2000 -40 to 175 -40 to 175 40 28 40 120 2000 -40 to 175 -40 to 175 Unit V V V A A °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Diode forward voltage Reverse current Symbol VF IR Conditions IF = 120 A, Tj = 25 °C VR = 20 V, Tj = 25 °C VR = 20 V, Tj = 125 °C MBRH12020 (R) MBRH12030 (R) MBRH12035 (R) MBRH12040 (R) 0.65 4 250 0.8 0.65 4 250 0.8 0.65 4 250 0.8 0.65 4 250 0.8 Unit V mA Thermal characteristics Thermal resistance, junction - case RthJC °C/W www.genesicsemi.com 1 Free Datasheet http://www.datasheet4u.net/ MBRH12020 thru MBRH12040R www.genesicsemi.com 2 Free Datasheet http://www.datasheet4u.net/ ...