MBRF2545CT

MBRF2545CT Preferred Device SWITCHMODE™ Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low-voltage, high-frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features ăHighly Stable Oxide Passivated Junction ăVery Low Forward Voltage Drop ăMatched Dual Die Construction ăHigh Junction Temperature Capability ăHigh dv/dt Capability ăExcellent Ability to Withstand Reverse Avalanche Energy Transients ăGuardring for Stress Protection ăEpoxy Meets UL 94 V-0 @ 0.125 in ăElectrically Isolated ăNo Isolation Hardware Required ăPb-Free Package is Available* Mechanical Characteristics: ăCase: Epoxy, Molded ăWeight: 1.9 Grams (Approximately) ăFinish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ăLead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds http://onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES, 45 VOLTS 1 2 3 MARKING DIAGRAM AYWW ISOLATED TO-220 CASE 221D B2545G AKA 1 STYLE 3 A = Assembly Location Y = Year WW = Work Week B2545 = Device Code G = Pb-Free Package AKA = Diode Polarity *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Ref...