MBRF20100CTG

Switch-mode Schottky Power Rectifier MBRF20100CTG The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94 V−0 @ 0.125 in Electrically Isolated. No Isolation Hardware Required. These are Pb−Free Devices Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds www.onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS 1 2 3 1 2 3 TO−220 FULLPAKt CASE 221D ORDERING AND MARKING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2016 1 October, 2019 − Rev. 11 Publication Order Number: MBRF20100CT/D MBRF20100CTG MAXIMUM RATINGS (Per Leg) Rating Sym...