MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR735/D
SWITCHMODE™ Power Rectifiers
. . . using the Sc...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR735/D
SWITCHMODE™ Power Rectifiers
. . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: Guardring for Stress Protection Low Forward
Voltage 150°C Operating Junction Temperature Guaranteed Reverse Avalanche Epoxy Meets UL94, VO at 1/8″
MBR735 MBR745
MBR745 is a Motorola Preferred Device
Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 units per plastic tube Marking: B735, B745
3 1, 4
SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
4
1 3
CASE 221B–03 TO–220AC
MAXIMUM RATINGS
Rating Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage Average Rectified Forward Current (Rated VR) TC = 105°C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 105°C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) Operating Junction Temperature Storage Temperature
Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM TJ Tstg dv/dt MBR735 35 MBR745 45 Unit Volts
7.5 15 150 1.0
7.5 15 150 1.0
Amps Amps Amps Amp °C °C V/µs
*65 to +150 *65 to ...