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MBR7030WTG

ON Semiconductor

Switch Mode Power Rectifier

MBR7030WTG Switch Mode Power Rectifier The Switch Mode power rectifier, a state−of−the−art device, employs the use of ...


ON Semiconductor

MBR7030WTG

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Description
MBR7030WTG Switch Mode Power Rectifier The Switch Mode power rectifier, a state−of−the−art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating 30 V Blocking Voltage Low Forward Voltage Drop Guardring for Stress Protection and High dv/dt Capability 175°C Operating Junction Temperature These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* Mechanical Characteristics Case: Epoxy, Molded. Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 4.3 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Ratings: Machine Model, B (< 400 V) Human Body Model, 3B (> 8000 V) MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR, TC = 100°C) Per Leg Per Device VRRM VRWM VR IF(AV) 30 35 70 V A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 100°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFRM IFSM 70 500 A A Peak Repetitive Reverse Current (2.0 ms, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg −55 to +175 °C Operating Junction Temperature (Note 1) TJ −55 to +175 °C Volta...




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