Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR7030WT
FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Prot...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR7030WT
FEATURES ·Low Forward
Voltage ·Guard -Ring for Stress Protection ·High Surge Capability ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
IF(AV)
IFSM
IRRM
Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage
Average Rectified Forward Current
(Rated VR) TC= 125℃ Per Diode
Per Device
Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions
Peak Repetitive Reverse Surge Current (20μs, 1.0kHz)
30
35 70
500
2.0
V A A A
TJ Junction Temperature
-55~150 ℃
Tstg Storage Tempe...
