MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR4045PT/D
Advance Information SWITCHMODE™ Power Rectif...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR4045PT/D
Advance Information SWITCHMODE™ Power Rectifier
The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating 45 Volt Blocking
Voltage Low Forward
Voltage Drop Guardring for Stress Protection and High dv/dt Capability (> 10 V/ns) Guaranteed Reverse Avalanche 150°C Operating Junction Temperature Mechanical Characteristics Case: Epoxy, Molded Weight: 4.3 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 30 Units Per Plastic Tube Marking: B4045
1 2,4 3
MBR4045PT
SCHOTTKY BARRIER RECTIFIER 40 AMPERES 45 VOLTS
4
1 2 3
CASE 340D–02
MAXIMUM RATINGS
Rating Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage Average Rectified Forward Current — Per Diode (Rated VR) @ TC = 125°C — Per Device Peak Repetitive Forward Current, Per Diode (Rated VR, Square Wave, 20 kHz) @ TC = 90°C Non Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Current (2.0 µs, 1.0 kHz) Operating Junction Temperature Storage Temperature Peak Surge Junction Temperature (Forwa...