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MBR4015LWTG Datasheet

Part Number MBR4015LWTG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Surface Mount Schottky Power Rectifier
Datasheet MBR4015LWTG DatasheetMBR4015LWTG Datasheet (PDF)

MBR4015LWTG Switch Mode Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Highly Stable Oxide Passivated Junction • Guardring for Overvoltage Protection • Low Forward Voltage Drop • D.

  MBR4015LWTG   MBR4015LWTG






Part Number MBR4015LWT
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Schottky Power Rectifier
Datasheet MBR4015LWTG DatasheetMBR4015LWT Datasheet (PDF)

MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Highly Stable Oxide Passivated Junction • Guardring for Overvoltage Protection • Low Forward Voltage Drop • Du.

  MBR4015LWTG   MBR4015LWTG







Part Number MBR4015LWT
Manufacturers Motorola
Logo Motorola
Description SWITCHMODE Power Rectifier
Datasheet MBR4015LWTG DatasheetMBR4015LWT Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBR4015LWT/D Advance Information SWITCHMODE™ Power Rectifier . . . using the Schottky Barrier principle this state–of–the–art device is dedicated to the ORing function in paralleling power supply and has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 15 Volt Blocking Voltage • Very Low Forward Voltage Drop • Guardring for Stress Protection and High dv/dt.

  MBR4015LWTG   MBR4015LWTG







Surface Mount Schottky Power Rectifier

MBR4015LWTG Switch Mode Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • Highly Stable Oxide Passivated Junction • Guardring for Overvoltage Protection • Low Forward Voltage Drop • Dual Diode Construction; Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating. • Full Electrical Isolation without Additional Hardware • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* Mechanical Characteristics • Case: Molded Epoxy • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 4.3 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface .


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