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MBR340RL

ON Semiconductor

SCHOTTKY BARRIER RECTIFIER

MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–si...


ON Semiconductor

MBR340RL

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Description
MBR340 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. http://onsemi.com Extremely Low VF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 40 VOLTS Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.1 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Lead and Mounting Surface Temperature for Soldering Purposes: Leads are Readily Solderable 220°C Max. for 10 Seconds, 1/16″ from case Shipped in plastic bags, 500 per bag Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part number Polarity: Cathode indicated by Polarity Band Marking: B340 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TA = 65°C (RqJA = 28°C/W, P.C. Board Mounting) Non–Repetitive Peak Surge Current (Note 1) (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75°C) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) Peak Operating Junction Temperature (Forwar...




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