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MBR3100RL

ON Semiconductor

SCHOTTKY BARRIER RECTIFIER

MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-s...


ON Semiconductor

MBR3100RL

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Description
MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard-Ring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature High Surge Capacity Mechanical Characteristics: http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS Case: Epoxy, Molded Weight: 1.1 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Lead and Mounting Surface Temperature for Soldering Purposes: Leads are Readily Solderable 220°C Max. for 10 Seconds, 1/16″ from case Shipped in plastic bags, 500 per bag Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part number Polarity: Cathode indicated by Polarity Band Marking: B3100 AXIAL LEAD CASE 267-05 (DO-201AD) STYLE 1 MARKING DIAGRAM MBR 3100 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current TA = 100°C (RqJA = 28°C/W, P.C. Board Mounting, see Note 2) Non-Repetitive Peak Surge Current (Sur...




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