MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR3045ST/D
Advance Information SWITCHMODE™ Power Rectif...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR3045ST/D
Advance Information SWITCHMODE™ Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier metal. This state–of–the–art device has the following features: Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating 45 V Blocking
Voltage Low Forward
Voltage Drop Guardring for Stress Protection 150°C Operating Junction Temperature Guaranteed Reverse Avalanche Mechanical Characteristics Case: Epoxy, Molded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube Marking: B3045
MBR3045ST
Motorola Preferred Device
SCHOTTKY BARRIER RECTIFIER 30 AMPERES 45 VOLTS
4
3 1
4 2 1 2 3
CASE 221A–06, STYLE 6 (TO–220AB)
MAXIMUM RATINGS
Rating Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage Average Rectified Current TC = 130°C Per Device Per Diode Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM TJ Tstg TJ(pk) dV/dt Max 45 Unit Volts
30 15 30 150 2.0 – 65 to +150 – 65 to +175 175 10000
Amps Amps Amps Amps °C °C °C V/µs
Peak Repetitive Forward Current, Per Diode (Square Wave, VR = 45 V, 20 kHz) Non Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Current, Pe...