MBR2520 MBR2530 MBR2540
® MOTOROLA
HOT CARRIER POWER RECTIFIER
· .. employing the Schottky Barrier principle in a lar...
MBR2520 MBR2530 MBR2540
® MOTOROLA
HOT CARRIER POWER RECTIFIER
· .. employing the Schottky Barrier principle in a large area metal·to· silicon power diode. State of the art geometry features epitaxial con· struction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low·
voltage, high·frequency inverters, free wheeling diodes, and polarity protection diodes.
Extremely Low vF
Low Power Loss/High
Low Stored Charge, Majority
Efficiency
Carrier Conduction
High Surge Capacity
SCHOTTKY BARRIER
RECTIFIERS
25 AMPERE
20,30,40 VOLTS
MAXIMUM RATINGS
Rating
Symbol MBR2520 MBR2530 MBR2540 Unit
Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage
VRRM
VRWM
20
30
40 Volts
VR
Non-Repetitive Peak Reverse
Voltage
VRSM
24
36
48 Volts
Average Rectified Forward Current
10
25
I Amp
VR(equiv.) ';;0.2 VR(dc), TC = 80°C
Ambient Temperature
TA
vc
Rated VR(dc),PF(AV) =0
90 85 80
ROJA = 3.50 CIW
Non-Repetitive Peak Surge Current (surge applied at rated load conditions. halfwave, single phase. 60 Hz)
IFSM _
800 (for 1 cycle) _
Amp
Operating and Storage Junction Temperature Range (Reverse
voltage applied)
Peak Operating Junction Temperature (Forward Current Applied)
TJ, T stg - - - 6 5 to + 1 2 5 _
.TJ (pk)
150
°c °c
THERMAL CHARACTERISTICS Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.1
Characteristic
Symbol Min Typ...