MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR2515L/D
Advance Information SWITCHMODE™ Power Rectifi...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MBR2515L/D
Advance Information SWITCHMODE™ Power Rectifier
. . . employing the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low
voltage, high frequency switching power supplies, low
voltage converters, OR’ing diodes, and polarity protection devices. Very Low Forward
Voltage (0.28 V Maximum @ 19 Amps, 70°C) Guardring for Stress Protection Highly Stable Oxide Passivated Junction (100°C Operating Junction Temperature) Epoxy Meets UL94, VO at 1/8″ Mechanical Characteristics Case: Epoxy, Molded Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube Marking: B2515L MAXIMUM RATINGS (Per Leg)
Rating Peak Repetitive Reverse
Voltage Working Peak Reverse
Voltage DC Blocking
Voltage Average Rectified Forward Current (Rated VR) TC = 90°C Peak Repetitive Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz) TC = 90°C Non Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 µs, 1.0 kHz) Operating Junction Temperature Storage Temperature Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM TJ Tstg
MBR251...