MBR160F Datasheet
SMD Type
Schottky Diodes MBR120F ~ MBR1200F
Diodes
■ Features
● Low power loss,high efficiency ● High forward surge current capability
● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
SOD-123F
Unit:mm
Cathode Band Top View
1.0± 0.2
1.8± 0.1
0.10-0.30
1.3± 0.15
2.8 ± 0.1 0.6 ± 0.25
3.7 ± 0.2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
MBR 120F
MBR 130F
MBR 140F
MBR 150F
MBR 160F
MBR 170F
MBR 180F
MBR 190F
MBR MBR 1100F 1200F
Unit
Repetitive Peak Reverse Voltage
VRRM 20 30 40 50 60 70 80 90 100 200
Maximum RMS Voltage Maximum DC Blocking Voltage Forward Voltage @ IF=1A
VRMS 14 21 28 35 42 49 56 63 70 140 V VDC 20 30 40 50 60 70 80 90 100 200
VF 0.55
0.7
0.85 0.95
Averaged Forward Current.Ta=75℃
IFAV
1
A
Peak Forward Surge Current Ta=25℃
IFSM
25
Maximum DC Reverse Current Ta=25℃ Ta=100℃
IR
1 mA
10
Typical Junction Capacitance (Note.1)
Cj
110
80 pF
Junction Temperature St.
Part Number |
MBR160TG |
Manufacturers |
American First Semiconductor |
Logo |
|
Description |
Schottky Barrier Rectifier |
Datasheet |
MBR160TG Datasheet (PDF) |
Schottky Barrier Rectifier
MBR120TG THRU MBR1200TG
Reverse Voltage: 20 to 200 Volts Forward Current: 1.0 Ampere
Package outline
Features
• Plastic package has Underwriters Laboratory Flammability Classification 94V-0
• Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability, Low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications • High temperature soldering guaranteed:
260 C/10 seconds at terminals • Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
Mechanical data
• Case: R-1 molded plastic body • Terminals: Plated axial l.
Part Number |
MBR160 |
Manufacturers |
Sunmate |
Logo |
|
Description |
AXIAL LEADED SCHOTTKY BARRIER RECTIFIER |
Datasheet |
MBR160 Datasheet (PDF) |
MBR120-MBR1100
AXIAL LEADED SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE: 20 - 100V CURRENT: 1.0 A
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection ! High Current Capability ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency
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PInrvoetertcetriso,nFArepep lWicahteioenlisng, a n d P o larity D
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Mechanical Data
! Case: DO-41, Molded Plastic ! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting .
Part Number |
MBR160 |
Manufacturers |
SIRECT |
Logo |
|
Description |
Power Schottky Rectifier |
Datasheet |
MBR160 Datasheet (PDF) |
ELECTRONIC
MBR140 ~ MBR1200
Power Schottky Rectifier - 1Amp 40~200Volt
□ Features
-For surface mounted applications -Low profile package -Built-in strain relief -Metal silicon junction, majority carrier conduction -Low power loss, high efficiency -High current capability, low forward voltage drop -High temperature soldering guaranteed -High reliability -High surge current capability -Epitaxial construction -Lead free device -ESD sensitive product handling required
□ Mechanical data
-Case:Molded plastic -Epoxy:UL 94V-0 rate flame retardant -Terminals:Solder plated, solderable per MIL-STD-750,method 2026 -Polarity:Color band denotes cathode end
□ Maximum ratings and Electrical characterist.
Part Number |
MBR160 |
Manufacturers |
Digitron Semiconductors |
Logo |
|
Description |
1 AMP SCHOTTKY RECTIFIER |
Datasheet |
MBR160 Datasheet (PDF) |
MBR150-MBR160
High-reliability discrete products and engineering services since 1977
1 AMP SCHOTTKY RECTIFIER
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage
RMS reverse voltage
Average rectified forward current (1) (VR(equiv) ≤ 0.2VR(dc), RӨJA = 80°C/W, PC board mounting, TA = 55°C)
Non-repetitive peak surge current (TA = 70°C) (surge applied at rated load conditions, halfwave, single phase, 60Hz)
Operating junction.
Schottky Diodes
SMD Type
Schottky Diodes MBR120F ~ MBR1200F
Diodes
■ Features
● Low power loss,high efficiency ● High forward surge current capability
● The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
SOD-123F
Unit:mm
Cathode Band Top View
1.0± 0.2
1.8± 0.1
0.10-0.30
1.3± 0.15
2.8 ± 0.1 0.6 ± 0.25
3.7 ± 0.2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
MBR 120F
MBR 130F
MBR 140F
MBR 150F
MBR 160F
MBR 170F
MBR 180F
MBR 190F
MBR MBR 1100F 1200F
Unit
Repetitive Peak Reverse Voltage
VRRM 20 30 40 50 60 70 80 90 100 200
Maximum RMS Voltage Maximum DC Blocking Voltage Forward Voltage @ IF=1A
VRMS 14 21 28 35 42 49 56 63 70 140 V VDC 20 30 40 50 60 70 80 90 100 200
VF 0.55
0.7
0.85 0.95
Averaged Forward Current.Ta=75℃
IFAV
1
A
Peak Forward Surge Current Ta=25℃
IFSM
25
Maximum DC Reverse Current Ta=25℃ Ta=100℃
IR
1 mA
10
Typical Junction Capacitance (Note.1)
Cj
110
80 pF
Junction Temperature St.
2017-06-08 : 2N4937 BC177 BC177A BC177B BC178 BC179 BC177 BC178 2N4239 2N4238