MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation
MBQ60T65PES
High Speed Fieldstop Trench IGBT Second Generation
General Description
This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT 2nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also it is high ruggedness and excellent quality for solar inverter, UPS, IH, welder and PFC application where low conduction losses are essential
Features
High Speed Switchi.
IGBT
MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation
MBQ60T65PES
High Speed Fieldstop Trench IGBT Second Generation
General Description
This IGBT is produced using advanced MagnaChip’s Field Stop Trench IGBT 2nd Generation Technology, which is not only the highest efficiency capable of switching behavior, but also it is high ruggedness and excellent quality for solar inverter, UPS, IH, welder and PFC application where low conduction losses are essential
Features
High Speed Switching & Low Power Loss VCE(sat) = 1.85V @ IC = 60A Eoff = 0.53mJ @ TC = 25°C High Input Impedance trr = 110ns (typ.) @diF/dt = 500A/ μs Maximum Junction Temperature 175°C
Applications
PFC UPS PV Inverter
Welder IH Cooker
TO-247
G C E
Maximum Rating
Parameter
Collector-emitter voltage
DC collector current, limited by Tvjmax
TC=25°C TC=100°C
Pulsed collector current, tp limited by Tvjmax Turn off safe operating area VCE ≤ 650V, Tvj ≤ 175.