MBQ40T120FES 1200V FieldStop Trench IGBT Datasheet
MBQ40T120FES
High speed FieldStop Trench IGBT
General Description
This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality.
This device is for PFC, UPS & Inverter applications.
Applications
PFC UPS Inverter
Features
High Speed Switching & Low Power Loss VCE(sat) = 2.0V @ IC = 40A High Input Impedance trr = 100ns (typ.) Ultr.
IGBT
MBQ40T120FES 1200V FieldStop Trench IGBT Datasheet
MBQ40T120FES
High speed FieldStop Trench IGBT
General Description
This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provides low VCE(SAT), high switching performance and excellent quality.
This device is for PFC, UPS & Inverter applications.
Applications
PFC UPS Inverter
Features
High Speed Switching & Low Power Loss VCE(sat) = 2.0V @ IC = 40A High Input Impedance trr = 100ns (typ.) Ultra Soft, fast recovery anti-parallel diode Ultra narrowed VF distribution control Positive Temperature coefficient for easy paralleling
TO-247
G C E
Absolute Maximum Ratings
Characteristics Collector-emitter voltage Gate-emitter voltage
Collector current
Pulsed collector current, pulse time limited by Tjmax Diode forward current @ TC = 100°C Diode pulsed current, Pulse time limited by Tjmax
Power dissipation
Short circuit withstand time VCE = 600V, VGE = 15V, TC = 150°C Operating Junction and storage temperature range
TC=25°C TC=100°C
TC=25°C TC=100°C
Thermal Characteristics
Characteristics Thermal resistance junction-to-ambient Thermal resistance junction-to-case for IGBT Thermal resistance junction-to-case for Diode
Jan. 2021. Version 1.2
1
Symbol VCES VGES
IC
ICM IF IFM
PD
tsc TJ, Tstg
Rating 1200 ±20 80 40 160 40 160 357 142
10
-55~150
Unit V V A A A A A W W
μs
°C
Symbol RθJA RθJC RθJC
Rating 40 0.35 0.8
Unit °C/W
Magnachip Semiconductor Ltd.
MBQ40T120FES 1200V F.