CYStech Electronics Corp.
Spec. No. : C196G6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/10
N- Channel Enhanc...
CYStech Electronics Corp.
Spec. No. : C196G6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/10
N- Channel Enhancement mode
MOSFET AND PNP BJT Complex Device
MBNP2074G6
Description
The MBNP2074G6 consists of a N-channel enhancement-mode
MOSFET and a PNP BJT in a single TSOP-6 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TSOP-6 package is universally preferred for all commercial-industrial surface mount applications.
Features
Simple drive requirement Low gate charge Low on-resistance Fast switching speed Pb-free package
Equivalent Circuit
MBNP2074G6
Outline
TSOP-6
C2 S1 D1
G:Gate B : Base S:Source E : Emitter D:Drain C : Collector
B2 E2 G1
MBNP2074G6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C196G6 Issued Date : 2011.01.20 Revised Date : Page No. : 2/10
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown
Voltage
Gate-Source
Voltage
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base
Voltage
Continuous Drain Current
(Note 1)
Pulsed Drain Current
(Note 2)
Collector Current(DC)
(Note 1)
Peak Collector Current
(Note 2)
Peak Base Current
(Note 2)
Total Power Dissipation (Note 1) Linear Derating Factor
Operating Junction and Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
BVDSS VGS VCBO VCEO VEBO ID IDM IC ICM IBM Pd
Tj, Tstg Rth,ja
Limits
N-channel
PN...