MBN1200GS12AW

IGBT MODU ODULE MBN1200GS12AW Silicon N-channel IGBT OUTLINE DRAWING 130 110 4- φ 6.5 Unit in mm 2-M4 19.5 27.5 FEAT EATURES RES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). E 110 C G 46.75 E 13 +1 37 -0.5 30 36 19 2-M8 E E Weight: 1,300 (g) ABSOLUTE MAXIMUM RATINGS (Tc=25°C ) Item Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current Symbol VCES VGES IC ICp IF IFM Pc Tj Tstg VISO - Unit DC 1ms DC 1ms Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Screw Torque Terminals Mounting Notes:(1)RMS Current of Diode 360Arms max. (2)Recommended Value 1.18/7.35N.m(12/75kgf.cm) CHARACTERISTICS Item Collector Emitter Cut-Off Current I CES mA 2.0 VCE=1,200V,VGE=0V Gate Emitter Leakage Current IGES nA ±500 VGE=±20V,VCE=0V Collector Emitter Saturation Voltage VCE(sat) V 2.9 3.6 IC=1,200A,VGE=15V Gate Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC =1,200mA Input Capacitance Cies nF 112 VCE=10V,VGE=0V,f=1MHz Rise Time tr 0.6 1.6 VCC=600V ms Turn On Time ton 0.8 2.2 RL=0.5W Switching Times Fall Time tf 0.45 0.55 RG=3.3W (4) 1.4 1.6 VGE=±15V Turn Off Time toff Peak Forward Voltage Drop VFM V 2.5 3.7 IF=1,200A,VGE=0V Reverse Recovery Time trr 0.5 IF=1,200A,VGE=-10V, di/dt=1200A/ms ms Junction to case Rth(j-c) °C/W 0.022 Thermal Impedance IGBT 0.05 FWD Rth(j-c) Notes:(4) RG value i...