MBM29F160TE

www.DataSheet4U.com FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-2E FLASH MEMORY CMOS 16M (2M × 8/1M × 16) BIT MBM29F160TE/BE-55/-70/-90 s GENERAL DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be programmed in-system with the standard system 5.0 V VCC supply. 12.0 V VPP is not required for write or erase operations. The device can also be reprogrammed in standard EPROM programmers. The standard MBM29F160TE/BE offers access times of 55 ns, 70 ns and 90 ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write enable (WE), and output enable (OE) controls. The MBM29F160TE/BE is pin and command set compatible with JEDEC standard E2PROMs. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0 V Flash or EPROM devices. (Continued) s PRODUCT LINE UP Part No. Ordering Part No. VCC = 5.0 V±5% VCC = 5.0 V±10% -55 — 55 55 30 MBM29F160TE/160BE — -70 70 70 30 — -90 90 90 40 Max. Address Access Time (ns) Max. CE ...