MBD301

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MBD301/D Silicon Hot-Carrier Diodes Schottky Barrier Diodes MBD301 MMBD301LT1 Motorola Preferred Devices These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. The Schottky Barrier Construction Provides Ultra–Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact Extremely Low Minority Carrier Lifetime – 15 ps (Typ) Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301 30 VOLTS SILICON HOT–CARRIER DETECTOR AND SWITCHING DIODES 1 2 MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) MBD301 Rating Reverse Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VR PF 280 2.8 TJ – 55 to +125 Tstg – 55 to +150 °C 200 2.0 mW mW/°C °C MMBD301LT1 Value 30 Unit Volts CASE 182– 02, STYLE 1 (TO–226AC) 2 CATHODE 1 ANODE 3 1 2 DEVICE MARKING MMBD301LT1 = 4T CASE 318 – 08, STYLE 8 SOT– 23 (TO – 236AB) 3 CATHODE 1 ANODE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Total Capacitance (VR = 15 V, ...