MB84VD23381EF

( DataSheet : www.DataSheet4U.com ) FUJITSU SEMICONDUCTOR DATA SHEET DS05-50301-1E Stacked MCP (Multi-Chip Package) FLASH MEMORY & FCRAM CMOS 64 M (×16) FLASH MEMORY & 16 M (×16) Mobile FCRAMTM MB84VD23381EF-85 s FEATURES Power Supply Voltage of 2.7 V to 3.0 V for FCRAM Power Supply Voltage of 2.7 V to 3.3 V for Flash High Performance 85 ns maximum access time (Flash) 85 ns maximum access time (FCRAM) (Continued) s PRODUCT LINE UP Flash Memory VCCf = 2.7 V to 3.3 V Max Address Access Time (ns) Max CE Access Time (ns) Max OE Access Time (ns) 85 85 35 FCRAM* VCCs = 2.7 V to 3.0 V 85 85 60 * : Both VCCf and VCCs must be the same level when either part is being accessed and VCCf can be 2.4 V during standby state. s PACKAGE 101-ball plastic FBGA (BGA-101P-M01) www.DataSheet4U.com www.DataSheet4U.com MB84VD23381EF-85 (Continued) Operating Temperature −30 °C to +85 °C Package 101-ball FBGA − FLASH MEMORY Simultaneous Read/Write Operations (FlexBankTM) Two virtual Banks are chosen from the combination of four physical banks Host system can program or erase in one bank, then read immediately and simultaneously read from the other bank Zero latency between read and write operations Read-while-erase Read-while-program Minimum 100,000 Write/Erase Cycles Sector Erase Architecture Sixteen 4 K words and one hundred twenty-six 32 K word sectors. Any combination of sectors can be concurrently erased. Also supports full chip erase. Embedded EraseTM Algorithms Aut...