MAX11014

www.DataSheet4U.com XX-XXXX; Rev 0; 10/05 Automatic RF MESFET Amplifier Drain-Current Controllers General Description The MAX11014/MAX11015 set and control bias conditions for dual MESFET power devices found in point-topoint communication and other microwave base stations. The MAX11014 integrates complete dual analog closed-loop drain-current controllers for Class A MESFET amplifier operation while the MAX11015 targets Class AB operation. Both devices integrate SRAM lookup tables (LUTs) that can be used to store temperature and drain-current compensation data. Each device includes dual high-side current-sense amplifiers to monitor the MESFET drain currents through the voltage drop across the sense resistors in the range of 0mV to 625mV. External diode-connected transistors monitor the MESFET temperatures while an internal temperature sensor measures the local die temperature of the MAX11014/MAX11015. The internal DAC sets the voltages across the current-sense resistors by controlling the GATE voltages. The internal 12bit SAR ADC digitizes internal and external temperature, internal DAC voltages, current-sense amplifier voltages and external GATE voltages. Two of the 11 ADC channels are available as general-purpose analog inputs for analog system monitoring. The MAX11014’s gate-drive amplifier functions as an integrator for the Class A drain-current control loop while the MAX11015’s gate-drive amplifier functions with a gain of -2 for Class AB applications. The currentlimite...