Surface Mount
Monolithic Amplifier
50Ω,
50 to 1000 MHz
Features
! NEW
MAV-11BSM
• equivalent to Agilent MSA-1105 and Mini-Circuit's MAV-11SM • high IP3, 34 dBm • excellent VSWR, 1.2:1 typ. • medium gain • output power, 18 dBm
Applications
CASE STYLE: RRR137
• cellular • VHF/UHF receivers/transmitters
Electrical Specifications @25°C
MODEL NO. FREQ. (MHz) GAIN, dB Typical @MHz MAXIMUM POWER, dBm
Output (1 dB Comp.) Typ. +18.0 Input (no dmg.) +13
DYNAMIC RANGE
NF IP3 dB dBm Typ. Typ. 4.4 34.
Monolithic Amplifier
Surface Mount
Monolithic Amplifier
50Ω,
50 to 1000 MHz
Features
! NEW
MAV-11BSM
• equivalent to Agilent MSA-1105 and Mini-Circuit's MAV-11SM • high IP3, 34 dBm • excellent VSWR, 1.2:1 typ. • medium gain • output power, 18 dBm
Applications
CASE STYLE: RRR137
• cellular • VHF/UHF receivers/transmitters
Electrical Specifications @25°C
MODEL NO. FREQ. (MHz) GAIN, dB Typical @MHz MAXIMUM POWER, dBm
Output (1 dB Comp.) Typ. +18.0 Input (no dmg.) +13
DYNAMIC RANGE
NF IP3 dB dBm Typ. Typ. 4.4 34
VSWR (:1) Typ.
In 1.2 Out 1.2
ABSOLUTE MAXIMUM RATING**
I P (mA) (mW) 80 460
DC POWER @ Pin 3
Device Current Volt (mA) Typ. Min. Max. 60 5.5 4.9 6.0
THERMAL RESISTANCE***
θjc, typ. °C/W 141
PRICE $
fL - fU
MAV-11BSM 50-1000
100 500 1000 2000 Flatness Min.* 12.7 12.1 11.3 9.5 ±0.7 9.5
Qty. (30) 1.50
* Minimum gain at highest frequency. Full temperature range. ** Permanent damage may occur if any of these limits are exceeded *** Thermal resistance θjc is from hottest junction in the device to the mounting surface of the leads.
Maximum Ratings
Operating Temperature Storage Temperature -40°C to 85°C -55°C to 100°C
Pin Configuration
RF IN RF OUT DC GND EXT. 1 3 3 2,4
model identification
Model MAV-11BSM marking 11
typical biasing configuration (MAV)
Resistor Values
Vcc 7 8 9 10 11 12 13 14 15 "1%" 28.0 45.3 61.9 78.7 95.3 113 127 143 158
Outline Drawing
Outline Dimensions ( inch mm )
A .28 7.11 B .14 3.56 C .030 0.76 D .020 0.51 E .145 3.68 F .110 2.79 G .006 0.15 H .010 0..