MAT01

a FEATURES Low VOS (VBE Match): 40 ␮V typ, 100 ␮ V max Low TCVOS: 0.5 ␮V/؇ C max High hFE: 500 min Excellent h FE Linearity from 10 nA to 10 mA Low Noise Voltage: 0.23 ␮ V p-p—0.1 Hz to 10 Hz High Breakdown: 45 V min Available in Die Form PRODUCT DESCRIPTION Matched Monolithic Dual Transistor MAT01 PIN CONNECTION TO-78 (H Suffix) The MAT01 is a monolithic dual NPN transistor. An exclusive Silicon Nitride “Triple-Passivation” process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. Very high hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages. NOTE: Substrate is connected to case. BURN-IN CIRCUIT REV. A Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 World Wide Web Site: http://www.analog.com Fax: 617/326-8703 © Analog Devices, Inc., 1997 MAT01–SPECIFIC...