MASWSS0118

www.DataSheet4U.com GaAs SP4T 2.5 V High Power Switch DC - 3.0 GHz Features Low Voltage Operation: 2.5 V Low Harmonics: < -65 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.65 dB at 1 GHz High Isolation: 23 dB at 2 GHz 4 mm 16-Lead PQFN Package 0.5 micron GaAs PHEMT Process MASWSS0118 V2 Functional Schematic GND GND ANT 39 pF Pin 16 Pin 1 V1 RF1 39 pF V4 RF4 39 pF Description M/A-COM’s MASWSS0118 is a GaAs PHEMT MMIC single pole four throw (SP4T) high power switch in a low cost 4 mm 16-lead PQFN package. The MASWSS0118 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size, and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other handset and related applications. This part can be used in all systems operating up to 3.0 GHz requiring high power at low control voltage. The MASWSS0118 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. GND GND RF3 39 pF GND RF2 39 pF GND Pin Configuration Pin No. 1 2 3 4 5 6 Pin Name V1 RF1 GND RF2 GND V2 V3 GND RF3 GND GND RF4 GND V4 GND ANT Paddle 2 GND Description Control 1 RF Port 1 RF Ground RF Port 2 RF Ground Control 2 Control 3 RF Ground RF Port 3 RF Ground RF Ground RF Port 4 RF Ground Control 4 RF Ground Antenna Port RF Ground V2 Ordering Informatio...