MAQ3078

MAQ 3 078 The item can replace 2SK3078 Approved by: Checked by: Issued by: SPECIFICATION PRODUCT: N -CHANNEL MOS TYPE MODEL: MAQ3 0 7 8 SOT89 HOPE MICROELECTRONIC CO.,LIMITED www.DataSheet4U.com Tel:+86-755-82973805 Fax:+86-755-82973550 Page 1 of 4 E-mail: sales@hoperf.com http://www.hoperf.com MAQ3078 The item can replace 2SK3078 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Output Power Gain Drain Efficiency : PO = 27.0 dBmW (Min.) : GP = 12.5 dB (Min.) : ηD = 46% (Typ.) Unit: mm MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDSS VGSS ID PD* Tch Tstg RATING 10 5 0.5 3.0 150 −45~150 UNIT V V A W °C °C *: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB SOT-89 MARKING www.DataSheet4U.com Tel:+86-755-82973805 Fax:+86-755-82973550 2 E-mail: sales@hoperf.com http://www.hoperf.com MAQ3078 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Output Power Drain Efficiency Power Gain Threshold Voltage Drain Cut-off Current Gate-Source Leakage Current SYMBOL PO ηD GP Vth IDSS IGSS The item can replace 2SK3078 TEST CONDITION VDS = 4.8 V Iidle = 108 mA (VGS = adjust) f = 915 MHz, Pi = 14.5 dBmW ZG = ZL = 50 Ω VDS = 4.8 V, ID = 0.5 mA VDS = 10 V, VGS = 0 V VGS = 5 V, VDS = 0 V MIN 27.0 ― 12.5 0.20 ― ― TYP. ― 46.0 ― ― ― ― MAX ― ― ― 1.20 10 5 UNIT dBmW % dB V µA µA CAUTION This transistor is the electrostatic sensitive device. Please h...