MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC4DSM/D
TRIACS
Silicon Bidirectional Thyristors
Desig...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC4DSM/D
TRIACS
Silicon Bidirectional Thyristors
Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Small Size Surface Mount DPAK Package Passivated Die for Reliability and Uniformity Blocking
Voltage to 800 V On–State Current Rating of 4.0 Amperes RMS at 108°C Low IGT — 10 mA Maximum in 3 Quadrants High Immunity to dv/dt — 50 V/ms at 125°C
G ORDERING INFORMATION To Obtain “DPAK” in Surface Mount Leadform (Case 369A) Shipped in Sleeves — No Suffix, i.e. MAC4DSN Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number, i.e. MAC4DSNT4 To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves — Add “–1” Suffix to Device Number, i.e. MAC4DSN–1 MT2
MAC4DSM MAC4DSN
Motorola Preferred Devices
TRIACS 4.0 AMPERES RMS 600 thru 800 VOLTS
MT2 MT1 MT1 MT2 G
CASE 369A–13 STYLE 6
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Peak Repetitive Off–State
Voltage (1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) On–State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108°C) Peak Non–Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width ≤ 10 msec, TC = 108°C) Average Gate Power (t = 8.3 msec, TC = 108°C) Peak Gate Current (Pulse Width ≤ 10 msec, TC = 108°C) Peak Gate
Voltage (Pulse Width ≤ 1...