MAC12HCD

MAC12HCD, MAC12HCM, MAC12HCN Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full–wave, silicon gate–controlled devices are needed. Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 High Commutating di/dt and High Immunity to dv/dt @ 125°C Minimizes Snubber Networks for Protection Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 80°C High Surge Current Capability – 100 Amperes Industry Standard TO-220AB Package for Ease of Design Glass Passivated Junctions for Reliability and Uniformity Device Marking: Logo, Device Type, e.g., MAC12HCD, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Off-State Voltage(1) (TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) MAC12HCD MAC12HCM MAC12HCN On-State RMS Current (All Conduction Angles; TC = 80°C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125°C) Circuit Fusing Consideration (t = 8.33 ms) Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C) Average Gate Power (t = 8.3 ms, TC = 80°C) Operating Junction Temperature Range Storage Temperature Range Symbol VDRM, VRRM 400 600 800 IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg 12 100 41 16 0.35 –40 to +125 –40 to +150 A A A2sec 1 Watts Watts °C 2 3 4 TO–220AB CASE 221A STYLE 4 Value Unit Volts http://onsemi.com TRIACS 12 AMPERES RMS 400 thru 800 VOLTS MT2 G ...