MAC08DT1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA SOTĆ223 Triac Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. Sensitive Gate Trigger Current in Four Trigger Modes Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Devices Supplied on 1 K Reel MAC08BT1 Series * *Motorola preferred devices TRIAC 0.8 AMPERE RMS 200 thru 600 Volts CASE 318E-04 (SOT-223) STYLE 11 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Peak Repetitive Blocking Voltage(1) (1/2 Sine Wave, Gate Open, TJ = 25 to 110°C) MAC08BT1 MAC08DT1 MAC08MT1 On-State Current RMS (TC = 80°C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TC = 25°C) Circuit Fusing Considerations (t = 8.3 ms) Peak Gate Power (t < 2.0 µs) Average Gate Power (TC = 80°C, t = 8.3 ms) Operating Junction Temperature Range Storage Temperature Range Maximum Device Temperature for Soldering Purposes (for 5 Seconds Maximum) IT(RMS) ITSM I2t PGM PG(AV) TJ Tstg TL Symbol VDRM 200 400 600 0.8 10 0.4 5.0 0.1 –40 to +110 –40 to +150 260 Amps Amps A2s Watts Watts °C °C °C Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient PCB Mounted per Figure 1 Thermal Resistance, Junction to Tab Measured on Anode Tab Adjacent to Epoxy Symbol RθJA RθJT Max 156 25 Unit °C/W °...