MAAM71200-H1

Low Noise GaAs MMIC Amplifier 7.5 - 12 GHz Features q q q q q q MAAM71200-H1 V 2.00 CR-16 2.7 dB Typical Noise Figure 15.5 dB Typical Gain Single Bias Supply Low Current Consumption DC Decoupled RF Input and Output Ceramic Package Description M/A-COM’s MAAM71200-H1 is a wide band, low noise GaAs MMIC amplifier enclosed in a leadless ceramic package1. The MAAM71200-H1 is a packaged version of M/A-COM’s MAAM71200 low noise MMIC amplifier chip. The fully monolithic design operates in 50 ohms without the need for external components. Dimensions are in inches. The MAAM71200-H1 is ideally suited for microstrip assemblies where wire or ribbon bonds are used for interconnects. Typical applications include radar, EW and communication systems. The MAAM71200 is fabricated using a mature 0.5-micron gate length GaAs process for increased reliability and performance repeatability. Typical Electrical Specifications, TA = +25°C, VDD = 4 V Parameter Gain Noise Figure Input VSWR Output VSWR Output 1dB Compression Point Third Order Intercept Point Reverse Isolation Bias Current (IDD) 1.Consult factory for a leaded ceramic package version. Units dB dB Min. 14.5 Typ. 15.5 2.7 2.0:1 1.8:1 Max. 3.5 dBm dBm dB mA 11 21 30 40 55 Low Noise GaAs MMIC Amplifier MAAM71200-H1 V 2.00 Absolute Maximum Ratings 1 Parameter Input Power VDD Junction Temperature Storage Temperature Thermal Resistance Absolute Maximum +20 dBm +9 Volts +150°C -65°C to +150°C 175°C/W Functional Diagram 1. Operation...