MA746

Schottky Barrier Diodes (SBD) MA4X746 (MA746) Silicon epitaxial planar type For super high speed switching For small current rectification I Features Two isolated elements are contained in one package, allowing high-density mounting IF(AV) = 200 mA and VR < 50 V are achieved Optimum for high frequency rectification because of its short reverse recovery time (trr) Low forward voltage VF and good rectification efficiency Mini type 4-pin package 2.90+0.02 –0.05 1.9±0.2 (0.95) (0.95) 3 4 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.1 –0.06 0.5R 2 (0.2) 0.60+0.10 –0.05 10° 1 (0.65) 5° +0.2 0 to 0.1 1.1–0.1 Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Non-repetitive peak Single forward-surge-current *2 Double *1 Peak forward current Average forward current Single Double *1 Single Double *1 Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg Rating 50 50 1 0.75 300 225 200 150 150 −55 to +150 Unit V V A Marking Symbol: M3M mA Internal Connection 3 4 mA °C °C Junction temperature Storage temperature 2 1 Note) *1: Value per chip *2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time * Ct trr VR = 50 V IF = 30 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 30 3.0 Conditions Min Typ Max 200 0.36 0.55 pF ns Unit µA V Note) 1. This product is sensitive to...