Schottky Barrier Diodes (SBD)
MA4X714
Silicon epitaxial planar type
Unit : mm
For switching circuits For wave detectio...
Schottky Barrier Diodes (SBD)
MA4X714
Silicon epitaxial planar type
Unit : mm
For switching circuits For wave detection circuit
Two MA3X704As are contained in one package (Two diodes in a different direction) Optimum for low-
voltage rectification because of its low forward rise
voltage (VF) Optimum for high-frequency rectification because of its short reverse recovery time (trr)
2.9 − 0.05
2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05
+ 0.25
+ 0.2
0.65 ± 0.15
1.9 ± 0.2
0.95
+ 0.2
0.95
0.5
I Features
0.5 R 4 1
+ 0.1
3
0.4 − 0.05
2
0.2 1.1 − 0.1
+ 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse
voltage (DC) Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR IFM Rating 30 150 110 30 20 125 −55 to +125 °C °C mA Unit V mA
0.4 ± 0.2
1 : Cathode 1 2 : Anode 2 3 : Cathode 2 4 : Anode 1 Mini Type Package (4-pin)
Marking Symbol: M1P Internal Connection
4 3 1 2
Junction temperature Storage temperature Note) * : Value per chip
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward
voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 1 0.4 1.0 Unit µA V V pF ns
Detection efficiency
65
0 to 0.1
0.1 to 0.3
0.8
0.16 − 0.06
+ 0.1
0.6 − 0
+ 0.1
0.4 − 0.05 1.45
+ 0.1
%
Note) 1. Schottky barr...