MA713

Schottky Barrier Diodes (SBD) MA4X713 (MA713) Silicon epitaxial planar type For switching For wave detection I Features Two isolated elements are contained in one package, allowing high-density mounting Two MA3X704A (MA704A) is contained in one package (of a type in the same direction) Low forward voltage VF , optimum for low voltage rectification Optimum for high frequency rectification because of its short reverse recovery time (trr) Mini type 4-pin package 2.90+0.02 –0.05 1.9±0.2 (0.95) (0.95) 3 4 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.1 –0.06 0.5R 2 (0.2) 0.60+0.10 –0.05 10° 1 (0.65) 5° +0.2 0 to 0.1 1.1–0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double * Single Double Junction temperature Storage temperature Note) *: Value per chip * Symbol VR IFM IF Tj Tstg Rating 30 150 110 30 20 125 −55 to +125 Unit V mA Marking Symbol: M1N Internal Connection 3 4 mA °C °C I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency * 2 1 Conditions VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF Min Typ 1.1+0.3 –0.1 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 EIAJ : SC-61 Mini4-G1 Package Max 1 0.4 1.0 Unit µA V Ct trr η 1.5 1.0 65 pF ns % Note) 1. This...