MA649

Fast Recovery Diodes (FRD) MA111 MA649 Silicon planer type (cathode common) 0.7±0.1 For switching s Features q q Unit : mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Low forward voltage V F Fast reverse recovery time trr 16.7±0.3 q High reverse voltage VR 7.5±0.2 ø3.1±0.1 4.2±0.2 1.4±0.1 1.3±0.2 0.8±0.1 0.5 -0.1 +0.2 14.0±0.5 Solder Dip 4.0 2.54±0.25 s Absolute Maximum Ratings (Ta= 25˚C) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature * Sine half wave : 10ms/cycle 5.08±0.5 Symbol VRRM VRSM IF(AV) IFSM* Tj Tstg Rating 200 200 5 30 – 40 to +150 – 40 to +150 Unit V V A A ˚C ˚C 1 : Anode 2 : Cathode (common) 3 : Anode TO-220F(a) (TO-220 Full-Pack Package) 1 2 3 s Internal Connection 1 2 3 s Electrical Characteristics (Ta= 25˚C) Parameter Repetitive peak reverse current Forward voltage (DC) Reverse recovery time Thermal resistance Symbol IRRM1 IRRM2 VF trr* Rth(j-c)* Rth(j-a) Condition VRRM= 200V, TC= 25˚C VRRM= 200V, Tj=150˚C IF= 2.5A, TC= 25˚C IF=1A, IR=1A Flat direct current between junction and case min typ max 100 6 1 100 3 63 Unit µA mA V ns ˚C/W ˚C/W Note 1. Rated input/output frequency : 10MHz 2. * trr measuring circuit 50Ω D.U.T 5.5Ω 50Ω IF IR trr 0.1 × IR Fast Recovery Diodes (FRD) MA649 IF – VF 100 TC=25˚C 107 IR – VR 12 PD(AV) – IF(AV) Ta=150˚C IR (nA) (A) 10 105 100˚C Average forward current PD(AV) (W...