Schottky Barrier Diodes (SBD)
MA4ZD14
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits I Feat...
Schottky Barrier Diodes (SBD)
MA4ZD14
Silicon epitaxial planar type
Unit : mm
For high-speed switching circuits I Features
S-mini type 4-pin package Low forward rise
voltage VF (VF < 0.4 V) Allowing high-density mounting
2.0 ± 0.1 1.3 ± 0.1
1
2.1 ± 0.1 1.25 ± 0.1
4
2
3
Repetitive peak reverse
voltage Forward current (DC) Peak forward current Non-repetitive peak
2 forward surge current*
VRRM IF IFM IFSM Tj Tstg
20 100 75 300 225 1 0.75 125 −55 to +125
V mA
Single Double*1 Single Double*1 Single Double*1
mA
1 : Anode 1 2 : Anode 2 3 : Cathode 2 4 : Cathode 1 S-Mini Type Package (4-pin)
A
Marking Symbol: M5D
°C °C
Junction temperature Storage temperature
Internal Connection
1 2 4 3
Note) *1 : Value per chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse current (DC) Forward
voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V IF = 5 mA IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 25 3 Conditions Min Typ Max 20 0.27 0.40 Unit µA V V pF ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring instrument
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA I...