MA4ZD14

Schottky Barrier Diodes (SBD) MA4ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits I Features S-mini type 4-pin package Low forward rise voltage VF (VF < 0.4 V) Allowing high-density mounting 2.0 ± 0.1 1.3 ± 0.1 1 2.1 ± 0.1 1.25 ± 0.1 4 2 3 Repetitive peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak 2 forward surge current* VRRM IF IFM IFSM Tj Tstg 20 100 75 300 225 1 0.75 125 −55 to +125 V mA Single Double*1 Single Double*1 Single Double*1 mA 1 : Anode 1 2 : Anode 2 3 : Cathode 2 4 : Cathode 1 S-Mini Type Package (4-pin) A Marking Symbol: M5D °C °C Junction temperature Storage temperature Internal Connection 1 2 4 3 Note) *1 : Value per chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V IF = 5 mA IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 25 3 Conditions Min Typ Max 20 0.27 0.40 Unit µA V V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA I...