MA4ST563

High Q Hyperabrupt Tuning Varactors Features q q q MA4ST550 Series V3.00 Case Styles q High Q Usable Capacitance Change of 7:1 Low Reverse Leakage for Good Post Tuning Drift Characteristics Reproducible C-V Curves Description The MA4ST550 family of high Q Silicon Hyperabrupt Tuning Varactors is available in a series of low parasitic capacitance microwave packages or in chip form. The MA4ST550 series of diodes is available with junction capacitances of approximately 0.8 pF to 8.2 pF at -4 volts. These diodes have capacitance change ratios as high as 7:1. 30 31 Applications The MA4ST550 series is appropriate for use in VCOs with frequencies within the range of approximately 1-14 GHz where a large capacitance change is required. These diodes are suited for VCOs in missile seekers, telecommunication systems and electronic warfare systems with critical post tuning drift specifications. 134 Environmental Performance All tuning varactors in ceramic packages are capable of meeting the performance tests dictated by the methods and procedures of the latest revisions of MIL-S-19500, MILSTD-202 and MIL-STD-750 which specify mechanical, electrical, thermal and other environmental tests common to semiconductor products. Absolute Maximum Ratings at 25°C Parameter Reverse Voltage Operating Temperature Storage Temperature Temperature Coefficient Absolute Maximum Same as Breakdown Voltage - 65°C to +150°C - 65°C to +200°C 400 ppm/°C at -4 Volts Specifications Subject to Change With...