MA4BPS201

PIN Diode Chips With Offset Bond Pads MA4BPS101, MA4BPS201, MA4BPS301 MA4BPS101, MA4BPS201, MA4BPS301 PIN Diode Chips with Offset Bond Pads Features Bond Pads Removed From Active Junction Large Bond Pads Support Multiple Bond Wires Rugged Silicon-Glass Construction Silicon Nitride Passivation Polyimide Scratch Protection Chip Layout Description These silicon - glass PIN diode chips are fabricated with M/A-COM’s patented HMIC™ process. They contain a single shunt silicon PIN diode embedded in a glass substrate with dual 75 x 150 micron bond pads located near the chip edges. The large pads allow use of multiple bond wires. The location of these pads on a glass substrate results in low parasitic capacitance. The diode junction is passivated with silicon nitride and a layer of polyimide has been added for scratch protection during assembly. The devices are available on industry standard tape frame for automatic insertion and assembly in high volume applications. Absolute Maximum Rating Parameter Operating Temperature Storage Temperature Forward Current Reverse Voltage Incident RF Power Mounting Temperature 1 Applications These diodes are designed for use as general PIN elements in switches and switched pad attenuators. The chips can handle up to 10 watts of RF power, and are well suited for use in T/R switches for subscriber phones, particularly the higher power and higher frequency systems for satellite based systems. They are also useful for the switching elem...