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MA3Z793 Datasheet

Part Number MA3Z793
Manufacturers Panasonic
Logo Panasonic
Description Silicon epitaxial planar type
Datasheet MA3Z793 DatasheetMA3Z793 Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA3Z793 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Two MA3Z792s diodes (series connection) are contained in the Smini type 3-pin package • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 .

  MA3Z793   MA3Z793






Part Number MA3Z792E
Manufacturers Panasonic
Logo Panasonic
Description Silicon epitaxial planar type
Datasheet MA3Z793 DatasheetMA3Z792E Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA3Z792E Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Two MA3Z792s diodes (cathode common) are contained in the Smini type 3-pin package • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + .

  MA3Z793   MA3Z793







Part Number MA3Z792D
Manufacturers Panasonic
Logo Panasonic
Description Silicon epitaxial planar type
Datasheet MA3Z793 DatasheetMA3Z792D Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA3Z792D Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Two MA3Z792s diodes (anode common) are contained in the Smini type 3-pin package • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0..

  MA3Z793   MA3Z793







Part Number MA3Z792
Manufacturers Panasonic
Logo Panasonic
Description Schottky Barrier Diodes (SBD)
Datasheet MA3Z793 DatasheetMA3Z792 Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA3Z792 (MA792) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 3 0.3+0.1 –0 0.15+0.1 –0.05 • High-density mounting is possible • IF(AV) = 100 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time (trr) • Low forward voltage VF and good rectification efficiency • S-Mini type 3-pin package 1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 5° 0.9±0.1 0 to 0.1 I .

  MA3Z793   MA3Z793







Part Number MA3Z792
Manufacturers Panasonic
Logo Panasonic
Description Silicon epitaxial planar type
Datasheet MA3Z793 DatasheetMA3Z792 Datasheet (PDF)

Schottky Barrier Diodes (SBD) MA3Z792 (MA792) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 3 0.3+0.1 –0 0.15+0.1 –0.05 • High-density mounting is possible • IF(AV) = 100 mA rectification is possible • Optimum for high frequency rectification because of its short reverse recovery time (trr) • Low forward voltage VF and good rectification efficiency • S-Mini type 3-pin package 1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 5° 0.9±0.1 0 to 0.1 I .

  MA3Z793   MA3Z793







Silicon epitaxial planar type

Schottky Barrier Diodes (SBD) MA3Z793 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Two MA3Z792s diodes (series connection) are contained in the Smini type 3-pin package • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Series*2 Single Series*2 IFSM Tj Tstg IF(AV) Symbol VR VRRM IFM Rating 30 30 300 200 100 70 1 125 −55 to +125 A mA Unit V V mA 0.9 ± 0.1 1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2 EIAJ : SC-70 Flat S-Mini Type Package(3-pin) Marking Symbol: M4A Internal Connection 1 Non-repetitive peak forward surge current*1 Junction temperature Storage temperature °C °C 2 3 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 20 2 Conditions Min Typ Max 15 0.55 Unit µA V pF ns Note) 1. Schottky barrier diode is.


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