MA3Z792D

Schottky Barrier Diodes (SBD) MA3Z792D Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features Two MA3Z792s diodes (anode common) are contained in the Smini type 3-pin package Allowing to rectify under (IF(AV) = 100 mA) condition Optimum for high-frequency rectification because of its short reverse recovery time (trr) Low VF (forward rise voltage), with high rectification efficiency 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double*2 Single Double*2 IFSM Tj Tstg IF(AV) Symbol VR VRRM IFM Rating 30 30 300 200 100 70 1 125 −55 to +125 A mA Unit V V mA 0.9 ± 0.1 1 : Cathode 1 2 : Cathode 2 3 : Anode 1, 2 Flat S-Mini Type Package (3-pin) Marking Symbol: M3Y Internal Connection 1 Non-repetitive peak forward surge current*1 Junction temperature Storage temperature °C °C 2 3 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 20 2 Conditions Min Typ Max 15 0.55 Unit µA V pF ns Note) 1. Schottky barrier diode is sensitive to electri...