PIN Diodes
MA3Z551
Silicon epitaxial planar type
Unit : mm
For high-frequency variable resistor attenuator
2.1 ± 0.1 0...
PIN Diodes
MA3Z551
Silicon epitaxial planar type
Unit : mm
For high-frequency variable resistor attenuator
2.1 ± 0.1 0.425 1.25 ± 0.1 0.425
Small diode capacitance CD Large variable range of forward dynamic resistance rf Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package
0.65
2.0 ± 0.2
1.3 ± 0.1
1
0.65
3
2
0.2
0.9 ± 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse
voltage (DC) Peak reverse
voltage Forward current (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR VRM IF PD Topr Tstg Rating 40 45 100 150 −25 to +85 −55 to +150 Unit V V mA mW °C °C
0.7 ± 0.1
0 to 0.1
0.2 ± 0.1
1 : Anode 2 : NC 3 : Cathode EIAJ SC-70 S-Mini Type Package (3-pin)
Marking Symbol: MY Internal Connection
1 3 2
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward
voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf1 rf2 VR = 40 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 10 µA, f = 100 MHz IF = 10 mA, f = 100 MHz 1 1.05 0.3 2 6 10 Conditions Min Typ Max 100 1.2 0.5 Unit nA V pF kΩ Ω
Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.15 − 0.05
+ 0.1
0.3 − 0
+ 0.1
I Features
1
MA3Z551
IF V F
25°C
PIN Diodes
CD VR
f = 1 MHz Ta = 25°C
120
10
IR Ta
1 000 VR = 40 V
100
5
Diode capacitance CD (pF)
Forward current IF (mA)
100
80
Ta = 60°C...