MA3XD11

Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.65 ± 0.15 2.8 − 0.3 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 2 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 20 25 1.0 3 125 −55 to + 125 V V A A °C °C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: M6K Internal Connection Note) *1 : With a alumina PC board *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 1 3 2 I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 20 V IF = 1.0 A VR = 0 V, f = 1 MHz 180 Conditions Min Typ Max 200 0.45 Unit µA V pF Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2. Rated input/output frequency: 400 MHz 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 0.8 Parameter Symbol Rating Unit 1.1 − 0.1 0.16 − 0.06 + 0.2 + 0.1 I Absolute Maximum Ratings Ta = 25°C 0.4 − 0.05 + 0.1 Sealed in the Mini type 3-pin package Allowing to rectify under (IF(AV) = 1 A) condition Low forward rise voltage VF 0.95 1.9 ± 0.2 2.9 − 0.05 1 + 0.2 0.95 3 1.45 I Features 1 MA3XD11 IF  V F 10 Ta = 125°C 1 1....