MA3X787

Schottky Barrier Diodes (SBD) MA3X787 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 + 0.2 1.5 − 0.05 + 0.25 0.65 ± 0.15 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature VR VRRM IFM IF(AV) IFSM Tj Tstg 50 50 300 100 1 125 −55 to +125 V V mA mA A °C °C 1 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M3U Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 0 to 0.1 Parameter Symbol Rating Unit 0.1 to 0.3 0.4 ± 0.2 1.1 I Absolute Maximum Ratings Ta = 25°C 0.8 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 50 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 25 3 Conditions Min Typ Max 30 0.55 Unit µA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 200 MHz 3. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100...