MA3X786D

Schottky Barrier Diodes (SBD) MA3X786D Silicon epitaxial planar type For super-high speed switching circuit For small current rectification 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Single Double*2 Single Double*2 IFSM Tj Tstg IF(AV) Symbol VR VRRM IFM Rating 30 30 300 200 100 70 1 125 −55 to +125 A mA Unit V V mA 1.1 − 0.1 1 : Cathode 1 2 : Cathode 2 JEDEC : TO-236 3 : Anode 1, 2 EIAJ : SC-59 Mini Type Package(3-pin) Marking Symbol: M3Y Internal Connection 1 Non-repetitive peak forward surge current*1 Junction temperature Storage temperature °C °C 2 0 to 0.1 0.1 to 0.3 0.4 ± 0.2 0.8 3 Note) *1 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) *2 : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 30 V IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 20 2 Conditions Min Typ Max 15 0.55 Unit µA V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 250 MHz 3. * : trr measuring circuit Bias Application Unit N-50B...