MA3X701

Schottky Barrier Diodes (SBD) MA3X701 (MA10701) Silicon epitaxial planar type For high-frequency rectification I Features Mini type 3-pin package Allowing to rectify under (IF(AV) = 700 mA) condition + 0.2 2.9 − 0.05 1.9 ± 0.2 0.95 0.95 0.65 ± 0.15 + 0.2 2.8 − 0.3 + 0.25 1.5 − 0.05 Unit : mm 0.65 ± 0.15 1.45 1 3 2 + 0.1 0.4 − 0.05 0 to 0.1 + 0.1 0.16 − 0.06 I Absolute Maximum Ratings Ta = 25°C + 0.2 1.1 − 0.1 0.8 Parameter Symbol Rating Unit Reverse voltage (DC) VR 30 V Repetitive peak reverse voltage VRRM 30 V Average forward current IF(AV) 700 mA Non-repetitive peak forward IFSM 5 A surge current* Junction temperature Storage temperature Tj 125 °C Tstg −55 to +150 °C Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 0.1 to 0.3 0.4 ± 0.2 1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59 Mini Type Package (3-pin) Marking Symbol: M4P Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) Forward voltage (DC) IR VR = 30 V VF IZ = 700 mA 80 µA 0.55 V Terminal capacitance Reverse recovery time*2 Ct VR = 0 V, f = 1 MHz trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 120 pF 7.5 ns Thermal resistance (1) Thermal resistance (2)*1 Rth(j-a)(1) Rth(j-a)(2) 420 °C/W 330 °C/W Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the ...