MA3X558

PIN Diodes MA3X558 Silicon epitaxial planar type For UHF and SHF bands AGC I Features Small diode capacitance CD Large variable range of forward dynamic resistance rf Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05 + 0.25 + 0.2 Unit : mm 0.65 ± 0.15 0.95 1.9 ± 0.2 2.9 − 0.05 1 3 2 + 0.2 0.95 1.45 0 to 0.1 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Power dissipation Operating ambient temperature* Storage temperature Symbol VR VRM IF PD Topr Tstg Rating 40 45 100 150 −25 to +85 −55 to +150 Unit V V mA mW °C °C 0.1 to 0.3 0.4 ± 0.2 Marking Symbol: M4C Internal Connection 1 3 2 Note) * : Maximum ambient temperature during operation I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf1 rf2 VR = 40 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 10 µA, f = 100 MHz IF = 10 mA, f = 100 MHz 1 1.05 0.3 2 6 10 Conditions Min Typ Max 100 1.2 0.5 Unit nA V pF kΩ Ω Note) 1 Rated input/output frequency: 100 MHz 2. Each characteristic is a standard for individual diode 3 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.8 I Absolute Maximum Ratings Ta = 25°C 1.1 − 0.1 1 : Anode 1 2 : Anode 2 JEDEC : TO-236 3 : Cathode 1,2 EIAJ : SC-59 Mini Type Package (3-pin) 0.16 − 0.06 + 0.2 + 0.1 0.4 − 0.05 + 0.1 1 MA3X55...