Band Switching Diodes
MA3X057
Silicon epitaxial planar type
2.8 − 0.3
+ 0.2
Unit : mm
0.65 ± 0.15
For band switching ...
Band Switching Diodes
MA3X057
Silicon epitaxial planar type
2.8 − 0.3
+ 0.2
Unit : mm
0.65 ± 0.15
For band switching I Features
Low forward dynamic resistance rf Less
voltage dependence of diode capacitance CD Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.65 ± 0.15
1.5
+ 0.25 − 0.05
0.95
1.9 ± 0.2
2.9 − 0.05
1 3 2
+ 0.2
0.95
1.45 0 to 0.1
Parameter Reverse
voltage (DC) Forward current (DC) Operating ambient temperature* Storage temperature
Symbol VR IF Topr Tstg
Rating 35 100 −25 to +85 −55 to +150
Unit V mA °C °C
0.1 to 0.3 0.4 ± 0.2
0.8
I Absolute Maximum Ratings Ta = 25°C
1.1 − 0.1
1 : Anode 2 : NC JEDEC : TO-236 3 : Cathode EIAJ : SC-59A Mini Type Package (3-pin)
Note) * : Maximum ambient temperature during operation
Marking Symbol: MX Internal Connection
1 3 2
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward
voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf VR = 33 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 3 mA, f = 100 MHz Conditions Min Typ 0.01 0.88 1.3 0.78 Max 100 1.0 2.0 1.15 Unit nA V pF Ω
Note) 1 Rated input/output frequency: 100 MHz 2. * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER
0.16 − 0.06
+ 0.2
+ 0.1
0.4 − 0.05
+ 0.1
1
MA3X057
IF V F
103 Ta = 25°C
10 8 6
Band Switching Diodes
CD VR
f = 1 MHz Ta = 25°C
IR T a
102 VR = 33 V
2
Reverse current IR (nA)
102
Diode capacitance CD (p...