MA3J745

Schottky Barrier Diodes (SBD) MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) Optimum for high-frequency rectification because of its short reverse recovery time (trr) I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 −55 to +125 Unit V V mA mA °C °C 0.9 ± 0.1 1 : Anode 2 : NC 3 : Cathode EIAJ : SC-70 Flat S- Mini Type Package (3-pin) Marking Symbol: M2M Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.9 kΩ, CL = 10 pF 1.5 1.0 Conditions Min Typ Max 30 0.3 1.0 Unit µA V V pF ns Detection efficiency 65 0.15 − 0.05 + 0.1 0.3 − 0 I Features % Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 000 MHz 3. * : trr measuring instrument Bias ...