Schottky Barrier Diodes (SBD)
MA3J742 (MA742)
Silicon epitaxial planar type
Unit: mm
For switching
3
0.3+0.1 –0
0.15...
Schottky Barrier Diodes (SBD)
MA3J742 (MA742)
Silicon epitaxial planar type
Unit: mm
For switching
3
0.3+0.1 –0
0.15+0.1 –0.05
Two MA3X716 (MA716) is contained in one package (series connection) Low forward
voltage VF , optimum for low
voltage rectification Optimum for high frequency rectification because of its short reverse recovery time (trr) S-Mini type 3-pin package
1.25±0.1 2.1±0.1
I Features
1 2 (0.65) (0.65) 1.3±0.1 2.0±0.2 5°
0.9±0.1
0 to 0.1
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse
voltage (DC) Peak reverse
voltage Forward current (DC) Single Series * Peak forward current Single Series * Junction temperature Storage temperature Note) *: Value per chip Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA
1 : Anode 1 2 : Cathode 2 3 : Cathode 1 Anode 2
SMini3-F1 Package
Marking Symbol: M1U Internal Connection
3
1
2
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward
voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency
*
Conditions VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak) , f = 30 MHz RL = 3.9 kΩ, CL = 10 pF
Min
Typ
Max 1 0.4 1
(0.15)
Unit µA V
Ct trr h
1.5 1 65
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. ...