Switching Diodes
MA3J142D
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.425
2.1 ± 0.1 1.25 ± 0.1 0...
Switching Diodes
MA3J142D
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.425
2.1 ± 0.1 1.25 ± 0.1 0.425
+ 0.1
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
Small S-mini type package contained two elements, allowing high-density mounting
1 3 2
I Absolute Maximum Ratings Ta = 25°C
Reverse
voltage (DC) Peak reverse
voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double Tj Tstg IFSM IFM VR VRM IF 80 80 100 150 225 340 500 750 150 −55 to +150 °C °C 1 3 2 mA mA V V mA
0.9 ± 0.1 0.15 − 0.05
+ 0.1
Parameter
Symbol
Rating
Unit
1 : Cathode 1 2 : Cathode 2 3 : Anode 1 Anode 2 Flat S-Mini Type Package (3-pin)
Marking Symbol: MO Internal Connection
I Electrical Characteristics Ta = 25°C
Parameter Reverse current (DC) Forward
voltage (DC) Reverse
voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 µA VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 80 15 10 Conditions Min Typ Max 100 1.2 Unit nA V V pF ns
Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Ω W.F.Analyzer (SAS-8130) Ri = 50 Ω
90% tp = 2 µs tr = 0.35 ns δ = 0.05
0.3 − 0
I Features
1
MA3J142D
IF V F
103 104...